The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

554 / 2019-03-14 20:11:32

Static thermal simulation of Heterogeneous InP-Silicon 3D IC Stack

Heterogeneous integration, Thermal Simulation, Si CMOS, InP HBT, finite element, HICs

Plenary track > Nanoelectronics

Diverse accessible heterogeneous integration (DAHI) ，a novel packing technology, is aimed at improving circuit performance and reducing the costs. Different materials, such as GaN, InP, SiGe and Si can be integrated with vertical heterogeneous interconnection (HIC) structures. It is natural an extension of three-dimensional integrated chips and advanced complete system in a package (SIP). Despite its enormous potential and advantages, thermal management is the biggest challenge in heterogeneous integration. In this paper, the thermal conduction in heterogeneous integration of InP and Si is researched by using the finite element method. The simulation results show that four HICs is enough for a signal hot spot in a limit area. Two-row configuration is the best tradeoff between HIC number and the thermal management in the HIC matrix. The static thermal simulation can guide the design of circuit layout in the later stage, such as the number and distribution of InP devices and HICs.