The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

570 / 2019-03-15 10:12:27

High Performance Core-shell Junction Field Effect Phototransistor by Molecular Monolayer Doping

photodetectors, transistors, silicon, nanowire

Plenary track > Silicon Devices

Modern integrated circuits require the on-chip
photodetectors operating with large photoresponsivity. In this
work, we demonstrate a high-performance core-shell junction
field effect (JFET) phototransistors based on single silicon
nanowires. The JFEF phototransistor is formed by doping a
section of a highly doped p-type Si nanowire into n-type via
self-assembled molecular monolayer doping. The p-type
nanowire channel is pinched-off by the sectional doping, which
suppresses the dark current and induces a large photogain.
Experimental and simulation results show that the nanowire
JFET photo-transistors possess a photoresponsivity of 106
A/W.