Description

The SISC provides a unique forum for device engineers, solid-state physicists, and materials scientists to discuss issues of common interest. Principal topics for discussion at SISC are semiconductor/insulator interfaces, the physics of insulating thin films, and the interaction among materials science, device physics, and state-of-the-art technology.

The first SISC meeting was held in 1965 and attendance was by invitation. The upcoming conference, now public, will be held in San Diego, right after the IEDM. An important goal of the conference is to provide an environment that encourages interplay between scientific and technological issues. Invited and contributed talks, as well as a lively poster sessions, are presented in an informal setting designed to encourage discussion, and conference participants enjoy numerous opportunities for social gatherings with renown scientists and engineers.

The conference addresses a wide range of interface-related topics ranging from the traditional silicon-based devices, including the SiC and SiGe systems, to high-mobility semiconductor interfaces and emerging areas beyond the state-of-the-art. Wednesday tutorial lecture, invited and contributed talks are complemented by informal events designed to encourage lively discussion and debate

Generous hospitality allows attendants to focus on enjoying the conference. Hors d’oeuvres, wine, and cheese encourage interaction among poster authors and other conference participants at Thursday’s and Friday’s poster sessions. On Friday evening the conference hosts a banquet and awards ceremony, complete with the now-famous (and always riotous) limerick contest. The limericks never fail to give the conference presentations, people and events an entirely new perspective!

This year's SISC will continue the tradition of presenting an award memorializing Prof. E. H. Nicollian. The award will be given for the best student presentation. Ed Nicollian was a pioneer in the exploration of metal oxide semiconductor (MOS) systems. His contributions were important to establishing SISC in its early years, and he served as the Technical Chair in 1982. With John Brews, he wrote the definitive book MOS Physics and Technology.

SISC is sponsored by the IEEE Electron Device Society.

For registration information and general inquiries about SISC, please contact the Arrangements Chair.

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Important Dates

Draft paper submission deadline:2020-08-09

Topics of submission

The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest, formally through invited and contributed presentations, and informally during various events including two poster presentation sessions. The SISC is sponsored by the IEEE Electron Device Society, and will be held right after the IEEE IEDM.

The program includes talks and poster presentations (theory and experiment) from all areas of MOS science and technology, including but not limited to:

  • SiO2 and high-k dielectrics on Si and their interfaces
  • Insulators on high-mobility and alternative substrates (SiGe, Ge, III-V and III-N, SiC, etc.)
  • MOS gate stacks with metal gate electrodes
  • Stacked dielectrics for non-volatile memory
  • Oxide and interface structure, chemistry, defects, and passivation: theory and experiment
  • Electrical characterization, performance and reliability of MOS-based devices
  • Surface cleaning technology and impact on dielectrics and interfaces
  • Dielectrics on nanowires, nanotubes, and graphene
  • Oxide electronics and multiferroics
  • Interfaces in photovoltaics, e.g. Si passivation
  • 2D materials and devices and their interfaces
  • Interfaces in semiconductor lighting and optical communications
  • Interfaces and surfaces in biotechnology such as bio-sensing

Best Student Presentation award will be given in memory of E.H. Nicollian, who made many important contributions to the field and had a strong presence within the SISC.

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Contact information

  • mpasslack@ieeesisc.org

Sponsored By

  • M. Passlack

Supported By

  • IEEE Electron Devices Society