The 20th International Workshop on Junction Technology (IWJT2021) will be held on June 10 - 11, 2021 through on-line . Since started in 2000, IWJT has been held annually in Japan or China. IWJT is an open forum focused on the needs and interests of the community on junction formation technology in semiconductors. In previous IWJTs, a number of eminent and experienced scientists and engineers from Asia, America and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their latest research results, and exchange ideas with leading scientists.

Sponsor Type:1; 9


General Chair : Hitoshi Wakabayashi (Tokyo Institute of Technology)

Executive Chair : Jiro Matsuo (Kyoto University)

Program Chair : Satoshi Shibata (Panasonic) 

Call for paper

Important date

Final paper submission deadline

Submission Topics

Papers are solicited in, but not limited to the following:

Doping Technology --- Ion implantation, plasma doping, gas and solid doping

Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, new activation annealing, lattice damage and defects

Junction Technology for Devices --- CMOS devices, Power devices, Image sensors, Solar cells, etc.

Silicide and Contact Technology --- Silicide materials and salicide technology, embedded and elevated S/D, low barrier contact, surface pre-treatment

Characterization for Shallow Junction --- Physical and electrical characterization of junctions for 2D and 3D structures

Modeling and Simulation --- Modeling and simulation of shallow junction formation of CMOS

Advanced Equipment, Materials and Substrates for Junction Technologies

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Important Date
  • Conference Date

    Jun 10



    Jun 11


  • Apr 16 2021

    Final Paper Deadline

Sponsored By
IEEE Electron Devices Society Japan Society of Applied Physics - JSAP
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