2016 21st International Conference on Ion Implantation Technology (IIT)

Planar and Non-Planar CMOS (FinFETs, nanowires, etc), 3D Memory and Power devices, Large-area Displays, LEDs, MEMS, Image Sensors, Photovoltaics, etc.

*Ion processing of Si, Group IV, III-V materials, graphene, disulphides, etc.

*Materials Modification by ion implanation and thermal processing technology for etch rate and dielectric constant modification, junction contact and metal gate work function tuning, PR stabilization for multi-exposure lithography, etc.

*Systems and conponents for beamline ion implantation, plasma doping, cluster and molecular ion beams over an ion energy range from ≈100 eV to several MeV.

*New doping techniques: "monolayer" dopant-organic films, ALD, selective CVD/epi, MOCVD,   laser-assisted doping, thermal and recoil mixing methods, etc.

*Advanced Thermal Annealing: Flash, Laser, Microwave, Neutral Beams, etc.

*Metrology methods: elemental, electrical and morphological analysis of 3D devices, junctions, strain,    interfaces and contacts, in-line process controls, etc.

*TCAD modeling.

Biotechnology: processing of bio-compatible surfaces and interfaces, fabricariion of DNA-scale sensors and bio-active devices.

*Photonic devices: CMOS-photonic integration, materials for multi-dimentional photonic signal processing and transmission,Vertical-Cavity Surface-Emitting Lasers.

*Ion-assited methods for advanced Photovoltaic devices and photon energy-shifting layers, etc.

*Layer transfer for Heterogeneous Materials Integration, 3D IC stacking, etc.

*Nano-scale device fabrication for quantum confined films, wires and dots, Quantum Information Processing, chemical and physical sensors, etc.