2013 IEEE International Electron Devices Meeting (IEDM 2013)

With a history stretching back nearly 60 years, the IEEE International Electron Devices Meeting (IEDM) is the world pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation. The conference scope not only encompasses devices in silicon, compound and organic semiconductors, but also in emerging material systems. IEDM is truly an international conference, with strong representation from speakers from around the globe. In 2013 there is once again an increased emphasis on circuit and device interaction. With ever increasing transistor count, nanometer design rules and layout restrictions, circuit-device interaction is becoming critical to providing viable technology solutions. This new emphasis includes technology/circuit co-optimization, power/performance/area analyses, design for manufacturing and process control, as well as CMOS platform technology and scaling.