IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.
Topics of Interest
CIRCUIT AND DEVICE INTERACTION (CDI)
Papers are solicited in all areas of semiconductor platform technologies, and circuit, design, and device technology interactions. Platform technologies include CMOS and compound semiconductors, and other novel underlying technologies. Topics include digital, analog device, and circuit performance and scaling issues, technology-design co-optimization, power performance-area analysis, impact of future device structures on circuit design, implication of circuit and architecture on interconnects, and issues such as design for manufacturability and process control as well as concepts for future circuit design and technology including neuromorphic and non-von Neumann circuit approaches. Submission of papers covering advanced device technology and design interactions such as variability, power constraints, physical layout effects in memory, logic, analog, and mixed-signal circuit issues and design complexity are encouraged.
CHARACTERIZATION, RELIABILITY and YIELD (CRY)
Papers are solicited in all areas of characterization, yield, and reliability, at both the front‐end and back‐end of the process. Topics include hot carriers, high‐k and low‐k dielectric wear‐out and breakdown, process charging damage, latch‐up, ESD, soft errors, noise and mismatch behavior, variability/reliability interaction and time dependent variability, bias temperature instabilities, and thermal modeling at the device, circuit, and packaging level. Other topics include interconnect reliability, electromigration, the impact of back‐end processing on devices, chip‐ package interaction, physics of failure analysis, reliability issues for memory, logic, and 3D technologies, and novel characterization techniques.
Compound Semiconductor and High Speed Devices (CHS)
Papers are solicited in the areas of compound semiconductor (GaAs, InGaAs, InP, GaN, SiC, SiGe, Antimonides and their related alloys, etc.) electronic devices and high-speed device technologies. Topics include III‐V MOS devices and device physics, high speed devices, ballistic devices, and RF passives. Devices of interest include HBTs (III-V and group IV) and HEMTs, RF/microwave/millimeter‐wave devices, SAW/BAW devices, and active and passive electron devices for ana-log applications.
MEMORY TECHNOLOGY (MT)
Papers are solicited covering all memory related technology topics, including devices for neuromor-phic computing applications. Topics span the full range from novel cell concepts to fully integrated memories and manufacturing issues. Areas of interest include cell design and scaling, processing, reliability, and modeling for both volatile and nonvolatile memories, as well as conventional and novel memory cells including ReRAM, STT‐MRAM, PCRAM, crosspoint and selectors, organic memory and NEMS‐based devices. Devices and physics of memristors and other device concepts that support neural computing paradigms are also of interest. Higher level topics include array optimization, 3D architectures, novel read/program/erase schemes, solid state drive (SSD) applications, novel hierarchies and architectures for memory-centric systems, and disruptive non‐volatile memory-enabled emerging logic applications.
MODELING and SIMULATION (MS)
Papers are solicited on analytical, numerical, and statistical approaches to modeling of electronic, optical, organic, and hybrid devices (including sensors), and their isolation and interconnection. Topics include physical and compact models for devices (including high voltage and power), materials modeling, modeling of fabrication processes and equipment, process characterization, parameter extraction, compact models for advanced technologies and novel devices, performance evaluation, design for manufacturing, reliability, variability, and technology benchmarking methodologies. Other topics include modeling of interactions between process, device, and circuit design. Submissions should advance the art of modeling and simulation or apply existing techniques to gain new insights into devices.
NANO DEVICE TECHNOLOGY (NDT)
Papers are solicited on novel solid state and nanoelectronic devices and concepts. This includes devices based on novel transport mechanisms such as tunnel FETs and other steep-slope devices, molecular devices, and emerging concepts for devices based on topological insulators, phase transitions, quantum effects, and non‐von Neumann devices. Non‐charge based logic, magnetic logic, spintronics, plasmonics, and quantum computing are also of interest. Furthermore, nanoelectronic devices based on low‐dimensional systems are encouraged, including 2D materials, nanowires, nanotubes, and quantum dots. Papers in NDT focus primarily on device physics and novel concepts; more mature “platform candidate” papers should be submitted to CDI.
OPTOELECTRONICS, DISPLAYS, and IMAGERS (ODI)
Papers are solicited on devices, structures, and integration for optoelectronics, photonics, displays, and imaging systems. Optoelectronic devices include photovoltaics, photonic bandgap structures and crystals, LEDs and lasers, as well as optoelectronic and photonic integrated circuits and optical interconnects. Papers on quantum photonics and photonic qubits for quantum computation are also of interest. Displays and imaging area topics include CMOS imagers, high‐speed imagers, optoelectronic devices, CCDs, TFTs, organic, amorphous, and polycrystalline devices, as well as emissive and reflective displays. Submission of papers addressing flexible and/or stretchable electronics, printed electronics, fundamental performance differences between CMOS and CCD imagers, organic and inorganic displays, and covering new technology trends in imagers and displays are encouraged. Other relevant subjects include device/circuit design, fabrication, reliability, theory, and modeling.
POWER DEVICES (PD)
Papers are solicited on discrete and integrated power devices and modules using Si, diamond, and compound semiconductors. Papers exploring the system-level impact of power devices are also of interest. Topics of interest include power devices (FETs, superjunction devices, IGBTs, etc.), and materials (Si, SiC, GaN, Diamond, GaAs, AlN, Ga2O3, etc.), manufacturing processes, device design, modeling, and physics. Devices targeting the full range of power and power conversion applications, including hybrid vehicles, power supplies for computer and telecom, motor drives, utility and grid control, and wireless power transfer, are of interest.
PROCESS and MANUFACTURING TECHNOLOGY (PMT)
Papers are solicited on innovations in individual process modules, process integration schemes, and process control and manufacturing techniques that improve device or circuit performance or enable new product functionality. Examples of front‐end process topics include substrates and isolation technologies, new transistor materials, integration of heterogeneous channel materials, multi-patterning and EUV lithography, self‐assembly techniques, deposition and etch techniques, novel dielectrics and metal electrodes for transistor gate stacks and MIM capacitors, shallow junctions, and silicides. Examples of back‐end process topics include conductor and barrier materials, low dielectric constant materials, contact and via processes, planarization, photonics‐electronics integration on CMOS, and advanced packaging. Also of interest are topics such as emerging process modules, 3D integration, additive manufacturing for microelectronics, process and tool design to reduce variation, defect reduction in heterogeneous material sys-tems, and process control strategies.
SENSORS, MEMS, and BioMEMS (SMB)
Papers are solicited in the area of sensors, sensor networks, micro electromechanical systems (MEMS), BioMEMS as well as NEMS‐based logic devices. The sensors area includes TFT‐based sensors and sensors for chemical, molecular, and biological detection including integrated biomedical sensing. Topics of interest in the MEMS and BioMEMS area include resonators and resonant sensors, RF MEMS, integrated inertial measurement units, integrated sensors and actuators, micro-optical devices, micro‐fluidic and bio‐electronic devices inspired or enabled by biomimetic structures, micro power generators, mechanical energy harvesting devices, optofluidic devices, and organic‐inorganic hybrid‐devices, with particular emphasis on new device concepts, integrated implementations, and complete sensor systems and networks.
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2021-12-13 United States San Francisco,USA2021 IEEE International Electron Devices Meeting
2020-12-10 United States San Francisco,USA2020 IEEE International Electron Devices Meeting
2019-12-09 United States San Francisco, USA2019 IEEE International Electron Devices Meeting
2018-11-29 United States San Francisco,USA2018 IEEE International Electron Devices Meeting
2017-12-04 United States2017 IEEE International Electron Devices Meeting
2015-12-07 United States2015 IEEE International Electron Devices Meeting
2014-12-15 United States2014 IEEE International Electron Devices Meeting
2013-12-09 United States2013 IEEE International Electron Devices Meeting