Introduction

The 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD) will take place at the Royton Sapporo, Sapporo, Japan May 28–June 1, 2017, including short course on May 28. ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and integrated circuits, their hybrid technologies, and applications. Following every year’s successful conference in each nominated global region, our conference returns to Japan.
ISPSD 2017 will be held in the beautiful city of Sapporo at the center of the island of Hokkaido. Hokkaido is the northernmost prefecture of Japan and is famous for its beautiful nature, delicious foods, and hot springs. Such a beautiful environment will foster active discussion at the conference.

Call for paper

Important date

2016-11-24
Abstract submission deadline
2017-03-31
Final paper submission deadline

Submission Topics

MAIN CATEGORIES OF INSTEREST INCLUDE:

  • High voltage devices (HV)

  • Low voltage devices and power IC device technology (LVT)

  • Power IC design (ICD)

  • GaN and nitride base compound materials (GaN)

  • SiC and other materials (SiC)

  • Module and Package Technologies (PK)

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Important Date

  • Conference Date

    May 28

    2017

    to

    Jun 01

    2017

  • Nov 24 2016

    Abstract Submission Deadline

  • Mar 31 2017

    Final Paper Deadline

  • Jun 01 2017

    Registration deadline

Sponsored By
The IEEE Electron Devices Society
The IEEE Power Electronics Society
New Generation Power Electronics and System Research Consortium of Japan
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