2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

1. High voltage silicon based discrete device (> 200V), including:

IGBTs, thyristors, GTOs and PiN diodes

Superjunction MOSFET and new unipolar device

High voltage power device failure mechanism

Wafer technology and lifetime control

New gate drive method to enhance IGBT and Superjunction MOSFET performance

Safe operating area and current filament effect in IGBT

New edge termination

Simulation or measurement technology related to this category

2. Low voltage silicon base discrete power device (≤ 200V) and power devices for power ICs for all voltage range, including:

High performance power MOSFET for DC-DC converters

LIGBT, LDMOS for 600V power ICs

SOI power devices for power ICs

Power device design on BCD technology

Device isolation technology

MOSFET structure for level shifter

Process integration for low voltage power devices

SOA of LDMOSFET

Simulation / measurement technology related to this category
(LVT category covers device design, device idea and device physics etc..)

3. Circuit design and demonstration using power IC technology platform, including:

Gate driver circuit design including WBG power device applications

Circuit design for SiC and GaN based IC

New circuit and layout design enhancing power IC performance

Single chip inverters and converters

New signal isolation technology on power IC such as magnetic coupling

Power SoC and passive component integration on a chip

ESD protection circuit

Compact circuit model for power IC design

New type of hybrid power ICs

Modeling, design platform and measurement technology for power IC

Note: ICD category covers power IC circuit design, system integration and IC architecture etc.

4. GaN and nitride base power devices technology and integration, including:

AlGaN/GaN hetero device

Vertical GaN MISFET

AlN power devices

Special circuit and application for GaN and nitride base power devices

GaN and nitride base power IC technology

Special application for GaN and nitridel devices

New process integration for GaN power IC

Simulation / measurement technology related to this category

5. SiC and other material base power devices technology and integration, including:

SiC power MOSFET, IGBT, SIT device and process development

SiC power IC technology

Diamond power devices

Gallium oxide power devices

Special application for SiC and other material devices

New process technology for SiC and other material devices

Simulation / measurement technology related to power device

6. Module and Package technology for discrete power devices and power ICs, including:

Power module, Transfer molded package demonstration

Power module design including wire frame

Chip current and temperature measurement

Pressure contact packages for high power system applications

Thermal management and new cooling technology

Stress and strain simulation for package structures and materials

3D-package and stray inductance management

Package design against noise and switching losses

Reliability physics and failure analysis related to package design and material

Package insulation technology and material, high temperature endurance

Power SiP hardware design

Application specific aspects (considering system integration e.g. different sub-topology, etc.)

Simulation / measurement technology related to this category