Introduction

The 28th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) takes place in Žofín Palace, Prague (Czech Republic) June 12–16, 2016. ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices, power integrated circuits, their hybrid technologies, and applications. With an annual attendance of over 400 engineers, scientists and students, the ISPSD has become must-go event in the power semiconductors. It is a truly international conference, rotating on a four-year cycle amongst Europe, North America, Japan and Other regions.

 

ISPSD’16 will be held in the historical city of Prague, also known as the “Mother of Towns”, “The Golden City”, or “The City of a Hundred Spires”. The beautiful Czech metropolis nestling above the river of Vltava, full of historical treasures, music and arts will give this conference a unique atmosphere.

Call for paper

Topics of interest include but are not limited to:

  • Devices: Device Physics, Device Design, High Frequency Devices, High Power Devices, Smart Power Devices, Safe-Operating Area, Reliability, ESD
  • Materials: Si, SiC, GaN, Diamond, GaAs
  • Power ICs: Isolation Techniques, SOI, Circuit Design, Device Technology, Energy Capability and SOA, Reliability, ESD, Power SoC, Monolithic vs Hybrid
  • Processes: Process Integration, Lifetime Control, Passivation, Crystal Growth, III-V (hetero)-epitaxial growth
  • Modeling/Simulation: Device and Circuit Simulation, Layout, Verification Tools
  • Packaging: Novel Packaging Concepts, Power SiP, Stress and Thermal Analysis, Thermal Management
  • Applications: Hybrid Vehicles, Power Supplies, Computer and Telecom Power, Motor Drives, Utility
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Important Date

  • Conference Date

    Jun 12

    2016

    to

    Jun 16

    2016

  • Jun 16 2016

    Registration deadline

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