Description

The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) will take place in Shanghai, May 19-23, 2019. ISPSD is the premier forum for technical discussions in all areas of power semiconductor devices, power integrated circuits, their hybrid technologies and applications. 

The conference rotates on a four-year cycle across the world. Shanghai is a beautiful city, one of the most cosmopolitan, diverse, dynamic, vibrant and fascinating cities in China. This is the first time that ISPSD is held in mainland China in its 31 years history.

Call for paper

Important Dates

Draft paper submission deadline:2018-11-12

Call for paper description

The ISPSD 2019 abstract submission deadline has been extended to November 23 (24:00, PST), 2018. For those who have not yet submitted their abstract, please do so before the deadline. No further extension will be considered.
ISPSD is the premier forum for technical discussions in all areas of power semiconductor devices and power integrated circuits. ISPSD 2019 will be held in the city of Shanghai, one of the most cosmopolitan, diverse, dynamic, vibrant and fascinating cities in China.

Author guidelines

• Abstract submission deadline:November 23, 2018  (https://www.epapers.org/ispsd2019)
• Author notification: January 21, 2019
• Late news submission (limited acceptance): March 1, 2019
• Final manuscript submission deadline: March 15, 2019
• A PDF abstract should be submitted through the website including a single-page text summary in English (500 words maximum) and up to two additional pages of supporting figures.

Topics of submission

Topics of interest include but not limited to:

l    High voltage power devices (HV): High voltage silicon based discrete devices (>200V)

l   Low voltage devices and power IC device technology (LVT): Low voltage silicon based discrete power devices (≤200V) and power devices for power ICs for all voltage ranges.

l    Power IC design (ICD): Circuit design and demonstration using power IC technology platform.

GaN and nitride based compound materials: Device and technology (GaN): GaN and nitride based power devices technology and integration, materials, and processing.

l   SiC and other materials: Device and technology (SiC): SiC and other material base power devices technology and integration.

l    Module and package technologies (PK): Module and Package technology for discrete power devices and power ICs.

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Contact information

  • ispsd2019@casa-china.com
  • General Inquiries
  • ispsd2019@casa-china.cn

Sponsored By

  • Zhejiang University
    China Advanced Semiconductor Industry Innovation Alliance(CASA)

Supported By

  • Chinese Society for Electrical Engineering
    IEEE Electron Devices Society
    IEEE Industry Applications Society
    IEEE Power Electronics Society
    The Institute of Electrical Engineers of Japan - IEEJ